Mitsubishi Electric held a business briefing for its power device business on November 9 and announced that it will invest 130 billion yen in the power semiconductor business over the next five years until 2025. The company plans to build a new 12-inch wafer production line in Fukuyama City, Hiroshima Prefecture, and plans to double its capacity by 2025 from 2020.
According to official sources, Mitsubishi Electric is currently building 8-inch and 12-inch production lines at its Fukuyama plant. The 8-inch line will begin trial operation in November 2021, with mass production scheduled to begin in spring 2022. The mass production target for the 12-inch wire is 2024.
Mitsubishi Electric said the new 12-inch production line has the advantages of increasing wafer diameter and increasing productivity through automation, as well as a unique “CSTBT cell structure” wafer that achieves low loss by adding a carrier storage layer inside. Through this improvement, Mitsubishi Electric hopes to achieve low losses and increased productivity, and Mitsubishi Electric will also apply it to RC-IGBTs to differentiate its products, and the automotive and consumer fields will be the company’s first for these products. target market.
In addition, according to Japanese media reports, regarding the use of silicon carbide (SIC) next-generation power semiconductors, Mitsubishi Electric executive director Jean Saito said at a business briefing held on the 9th that the Kumamoto plant has sufficient production capacity and will focus on automobiles in the future. Industry trends to assess whether to make additional investment.
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